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DMTH10H010SPS - 100V N-CHANNEL MOSFET

General Description

Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is Case: PowerDI®5060-8 designed to minimize RDS(ON), yet maintain superior switching

Case Material: Molded Plastic, “Green” Molding Compound.

performance.

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching.
  • Ensures more reliable and robust end.

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Full PDF Text Transcription (Reference)

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Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V ID TC = +25°C 123A 108A Green DMTH10H010SPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures more reliable and robust end application  Low RDS(ON) – Minimizes On-State Losses  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.