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DMTH10H025LPSQ
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
Features
BVDSS 100V
RDS(ON) Max
23mΩ @ VGS = 10V 30mΩ @ VGS = 6V
ID TC = +25°C
45A
38A
Description
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Synchronous Rectifier DC-DC Converters Primary Side Switching
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable And Robust End Application
Low RDS(ON) – Minimizes On-State Losses Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
DMTH10H025LPSQ Datasheet
