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DMTH10H032LFVW
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 100V
RDS(ON) MAX 30mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V
ID MAX TC = +25°C
26A
21A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
DMTH10H032LFVW Datasheet
