DMTH10H4M6SPSW Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and load switches.
DMTH10H4M6SPSW Key Features
- 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON)
- Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive