Datasheet4U Logo Datasheet4U.com

DMTH10H4M6SPSW - 100V N-CHANNEL MOSFET

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.

This device is ideal for use in notebook battery power managements and load switches.

Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

📥 Download Datasheet

Datasheet preview – DMTH10H4M6SPSW

📁 Similar Datasheet

Other Datasheets by DIODES

Full PDF Text Transcription

Click to expand full text
ADVANCED INFORMATION DMTH10H4M6SPSW 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 4.9mΩ @ VGS = 10V ID Max TC = +25°C 115A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and load switches. Features  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
Published: |