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DMTH12H007SPSWQ - 120V N-CHANNEL MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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DMTH12H007SPSWQ 120V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 120V RDS(ON) Max 8.9mΩ @ VGS = 10V 16mΩ @ VGS = 6V ID TC = +25°C (Note 10) 84A 70A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Thermally Efficient Package – Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  <1.
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