Download DMTH12H007SPSWQ Datasheet PDF
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DMTH12H007SPSWQ Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DMTH12H007SPSWQ Key Features

  • Rated to +175°C
  • Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production
  • Ensures More Reliable and Robust End Application
  • Thermally Efficient Package
  • Cooler Running

DMTH12H007SPSWQ Applications

  • Ideal for High Ambient Temperature Environments