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DMTH3004LFGQ Datasheet 30v N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: ADVANCE INNEFWORPRMOADTIUOCNT DMTH3004LFGQ Product Summary 30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 Engine Management Systems  Body Control Electronics  DC-DC Converters  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliable and Robust End Application  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd x RDS(ON) Product (FOM)  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product  100% UIS (Avalanche) Rated  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

“Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note4) Mechanical Data  Case: PowerDI®3333-8  Case Material: Molded Plastic, "Green" Molding Compound.

Key Features

  • BVDSS 30V RDS(ON) Max 5.5mΩ @ VGS = 10V 8.5mΩ @ VGS = 4.5V ID Max TC = +25°C 75A 50A.

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