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DMTH4008LFDFWQ
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 40V
RDS(ON) Max
11.5mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V
ID Max TA = +25°C
11.6A 9.3A
Description
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
• Power-management functions • DC-DC converters • Backlighting
Features
• Rated to +175°C – Ideal for High Ambient Temperature Environments
• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
• Low RDS(ON) – Ensures On State Losses Are Minimized • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.