DMTH41M3LPSW
Description
and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.
Key Features
- Rated to +175°C - Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON) - Minimizes Power Losses
- <1.1mm Package Profile - Ideal for Thin Applications
- Wettable Flank for Improved Optical Inspection
- Fast Switching Speed
- Low Input Capacitance
- Lead-Free Finish; RoHS pliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
