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DMTH8008LFGQ - 80V N-CHANNEL MOSFET

Description

and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of

automotive applications.

PPAP and is ideal for use in: Backlighting Power Management Functions DC-DC Co

Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • Low RDS(ON).
  • Ensures On-State Losses are Minimized.
  • Excellent Qgd × RDS(ON) Product (FOM).
  • Advanced Technology for DC-DC Converts.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More.

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Datasheet Details

Part number DMTH8008LFGQ
Manufacturer DIODES
File Size 462.70 KB
Description 80V N-CHANNEL MOSFET
Datasheet download datasheet DMTH8008LFGQ Datasheet
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DMTH8008LFGQ 80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 6.9mΩ @ VGS = 10V 10.4mΩ @ VGS = 4.5V ID Max TC = +25°C 70A 57A Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converts  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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