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DSS5240VQ - 40V PNP LOW SATURATION TRANSISTOR

General Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEO > -40V.
  • IC = -1.8A High Continuous Collector Current.
  • ICM = -3A Peak Pulse Current.
  • Low Collector-Emitter Saturation Voltage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DSS5240VQ is suitable for automotive.

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Full PDF Text Transcription for DSS5240VQ (Reference)

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DSS5240VQ 40V PNP LOW SATURATION TRANSISTOR IN SOT563 Description This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive appl...

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BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -40V • IC = -1.8A High Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Collector-Emitter Saturation Voltage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The DSS5240VQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data • Package: SOT563 • Package Material