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DXT2011P5Q - 100V NPN TRANSISTOR

General Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications Mechanical Data Case: PowerDI®5

Case Material: Molded Plastic, “Green” Molding Compound.

Moisture Sensitivity: Le

Key Features

  • BVCEO > 100V.
  • IC = 6A High Continuous Collector Current.
  • ICM = 10A Peak Collector Current.
  • PD up to 3.2W.
  • 43% Smaller than SOT223; 60% Smaller than TO252.
  • Maximum Height just 1.1mm.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DXT2011P5Q is suitable for automotive.

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Other Datasheets by Diodes Incorporated

Part Number Description
DXT2011P5 NPN MEDIUM POWER TRANSISTOR
DXT2010P5 NPN MEDIUM POWER TRANSISTOR
DXT2012P5 PNP MEDIUM POWER TRANSISTOR
DXT2013P5 PNP MEDIUM POWER TRANSISTOR
DXT2014P5 PNP MEDIUM POWER TRANSISTOR

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DXT2011P5Q 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR Description This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications Mechanical Data • Case: PowerDI®5 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish—Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 • Weight: 0.093 grams (Approximate) Features • BVCEO > 100V • IC = 6A High Continuous Collector Current • ICM = 10A Peak Collector Current • PD up to 3.2W • 43% Smaller than SOT223; 60% Smaller than TO252 • Maximum Height just 1.1mm • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.