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DXTN10060DFJBQ - 60V NPN TRANSISTOR

Datasheet Summary

Description

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor.

The U-DFN2020-3 (Type B) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.

Features

  • BVCEO > 60V.
  • IC = 4A Continuous Collector Current.
  • Low Saturation Voltage (100mV Max @1A).
  • RSAT = 60mΩ for a Low Equivalent On-Resistance.
  • hFE Specified up to 6A for High Current Gain Hold Up.
  • Tighter Gain Specification.
  • Low Profile 0.6mm High Package for Thin.

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Datasheet preview – DXTN10060DFJBQ

Datasheet Details

Part number DXTN10060DFJBQ
Manufacturer DIODES
File Size 408.30 KB
Description 60V NPN TRANSISTOR
Datasheet download datasheet DXTN10060DFJBQ Datasheet
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DXTN10060DFJBQ 60V NPN LOW SATURATION TRANSISTOR Description Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The U-DFN2020-3 (Type B) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance. Features  BVCEO > 60V  IC = 4A Continuous Collector Current  Low Saturation Voltage (100mV Max @1A)  RSAT = 60mΩ for a Low Equivalent On-Resistance  hFE Specified up to 6A for High Current Gain Hold Up  Tighter Gain Specification  Low Profile 0.
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