DXTN10060DFJBQ Overview
Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The U-DFN2020-3 (Type B) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.
DXTN10060DFJBQ Key Features
- BVCEO > 60V
- IC = 4A Continuous Collector Current
- Low Saturation Voltage (100mV Max @1A)
- RSAT = 60mΩ for a Low Equivalent On-Resistance
- hFE Specified up to 6A for High Current Gain Hold Up
- Tighter Gain Specification
- Low Profile 0.6mm High Package for Thin
DXTN10060DFJBQ Applications
- Ideal for High Temperature Environment Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DXTN1006