DXTN10060DFJBQ Datasheet 60V NPN TRANSISTOR

Manufacturer: Diodes Incorporated

DXTN10060DFJBQ 60v npn transistor by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DXTN10060DFJBQ
Manufacturer	Diodes Incorporated
File Size	408.30 KB
Description	60V NPN TRANSISTOR
Download	DXTN10060DFJBQ Download (PDF)

General Description

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor.

The U-DFN2020-3 (Type B) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.

Overview

DXTN10060DFJBQ 60V NPN LOW SATURATION TRANSISTOR.

Key Features

BVCEO > 60V.
IC = 4A Continuous Collector Current.
Low Saturation Voltage (100mV Max @1A).
RSAT = 60mΩ for a Low Equivalent On-Resistance.
hFE Specified up to 6A for High Current Gain Hold Up.
Tighter Gain Specification.
Low Profile 0.6mm High Package for Thin.

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