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FZT753Q Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

FZT753Q Key Features

  • BVCEO > -100V
  • IC = -2A High Continuous Current
  • ICM = -6A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < -300mV @ -1A
  • plementary NPN Type: DIODES™ FZT653
  • Lead-Free Finish; RoHS pliant (Notes 1 & 2)
  • Halogen- and Antimony-Free. “Green” Device (Note 3)
  • The DIODES™ FZT753Q is suitable for automotive

FZT753Q Applications

  • Matte Tin Plated Leads, Solderable per