FZT789AQ Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
FZT789AQ Key Features
- BVCEO > -25V
- IC = -3A High Continuous Current
- Low Saturation Voltage VCE(sat) < -250mV @ -1A
- RCE(sat) = 93mΩ for a Low Equivalent On-Resistance
- hFE Specified up to -6A for a High Gain Hold-Up
- plementary NPN Type: DIODES™ FZT689B
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DIODES™ FZT789AQ is suitable for automotive
FZT789AQ Applications
- Matte Tin Plated Leads, Solderable per