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FZT789AQ - 25V PNP TRANSISTOR

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Features

  • BVCEO > -25V.
  • IC = -3A High Continuous Current.
  • Low Saturation Voltage VCE(sat) < -250mV @ -1A.
  • RCE(sat) = 93mΩ for a Low Equivalent On-Resistance.
  • hFE Specified up to -6A for a High Gain Hold-Up.
  • Complementary NPN Type: DIODES™ FZT689B.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DIODES™ FZT789AQ is suitable for automotive.

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Full PDF Text Transcription

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Green FZT789AQ 25V PNP MEDIUM POWER TRANSISTOR IN SOT223 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features  BVCEO > -25V  IC = -3A High Continuous Current  Low Saturation Voltage VCE(sat) < -250mV @ -1A  RCE(sat) = 93mΩ for a Low Equivalent On-Resistance  hFE Specified up to -6A for a High Gain Hold-Up  Complementary NPN Type: DIODES™ FZT689B  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ FZT789AQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.
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