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ZX5T951GQ - 60V PNP TRANSISTOR

General Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEO > -60V.
  • IC = -5.5A High Continuous Collector Current.
  • ICM = -15A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < -70mV @ -1A.
  • RSAT = 39mΩ for a Low Equivalent On-Resistance.
  • hFE Specified Up to -10A for a High Gain Hold Up.
  • Complementary NPN Type: ZX5T851GQ.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen- and Antimony-Free. “Green” Device (Note 3).
  • The ZX5T951GQ is suitable for automotive.

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Full PDF Text Transcription for ZX5T951GQ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ZX5T951GQ. For precise diagrams, and layout, please refer to the original PDF.

ZX5T951GQ Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Description This bipolar junction transistor (BJT) is designed to meet the stringent requirements...

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nction transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features  BVCEO > -60V  IC = -5.5A High Continuous Collector Current  ICM = -15A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -70mV @ -1A  RSAT = 39mΩ for a Low Equivalent On-Resistance  hFE Specified Up to -10A for a High Gain Hold Up  Complementary NPN Type: ZX5T851GQ  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen- and Antimony-Free. “Green” Device (Note 3)  The ZX5T951GQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and

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