ZXMN10B08E6 Datasheet | Diodes Incorporated

Product Summary BVDSS 100V Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Max ID TA = +25C (Note 5) 1.9A 1.68A 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Low On-Resistance - Fast Switching Speed - Low Threshold - Low Gate Drive - SOT26 Package - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://.diodes./products/automot...