Click to expand full text
ZXMN6A08GQ
60V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
0.08Ω @ VGS = 10V 0.15Ω @ VGS = 4.5V
ID Max TA = +25°C
5.3A 2.8A
Features and Benefits
Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The ZXMN6A08GQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications.
ZXMN6A08GQ Datasheet
