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ZXTD619MC - DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR

Datasheet Summary

Features

  • BVCEO > 50V.
  • IC = 4A Continuous Collector Current.
  • Low Saturation Voltage (100mV max @ 1A).
  • RSAT = 68mΩ for Low Equivalent On Resistance.
  • hFE specified up to 6A for high current gain holds up.
  • Dual NPN saving footprint and component count.
  • Low profile 0.8mm high package for thin.

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Datasheet Details

Part number ZXTD619MC
Manufacturer DIODES
File Size 207.68 KB
Description DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR
Datasheet download datasheet ZXTD619MC Datasheet
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Full PDF Text Transcription

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A Product Line of Diodes Incorporated ZXTD619MC DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 68mΩ for Low Equivalent On Resistance • hFE specified up to 6A for high current gain holds up • Dual NPN saving footprint and component count • Low profile 0.8mm high package for thin applications • RθJA efficient, 40% lower than SOT26 • 6mm2 footprint, 50% smaller than TSOP6 and SOT26 • Lead-Free, RoHS Compliant (Note 1) • Halogen and Antimony Free. “Green” Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: DFN3020B-8 • Case Material: Molded Plastic. “Green” Molding Compound. • Terminals: Pre-Plated NiPdAu leadframe.
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