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ZXTN19020DFF - NPN HIGH GAIN POWER TRANSISTOR

Description

Advanced process capability has been used to maximize the performance of this transistor.

The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.

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Features

  • BVCEO > 20V.
  • IC = 6.5A Continuous Collector Current.
  • Very Low Saturation Voltage VCE(sat) < 30mV @ 1A.
  • RCE(sat) = 18mΩ.
  • High hFE Min 260 @ 2A.
  • 1.5W Power Dissipation.
  • High Forward Blocking Voltage.
  • Complementary PNP Type: ZXTP19020DFF.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 and 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Datasheet preview – ZXTN19020DFF

Datasheet Details

Part number ZXTN19020DFF
Manufacturer DIODES
File Size 421.75 KB
Description NPN HIGH GAIN POWER TRANSISTOR
Datasheet download datasheet ZXTN19020DFF Datasheet
Additional preview pages of the ZXTN19020DFF datasheet.

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Full PDF Text Transcription

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ZXTN19020DFF 20V NPN HIGH GAIN POWER TRANSISTOR Features  BVCEO > 20V  IC = 6.5A Continuous Collector Current  Very Low Saturation Voltage VCE(sat) < 30mV @ 1A  RCE(sat) = 18mΩ  High hFE Min 260 @ 2A  1.5W Power Dissipation  High Forward Blocking Voltage  Complementary PNP Type: ZXTP19020DFF  Totally Lead-Free & Fully RoHS Compliant (Notes 1 and 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
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