DOB50N06P - N-Channel MOSFET

Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features

1) VDS=60V,ID=50A,RDS(ON).

DOINGTER

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Datasheet Details

Part number	DOB50N06P
Manufacturer	DOINGTER
File Size	1.14 MB
Description	N-Channel MOSFET
Datasheet	DOB50N06P Datasheet
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Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. DOB50N06P D Features： 1) VDS=60V,ID=50A,RDS(ON)<22mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. GS Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentContinuous Drain Current-TC=100℃ Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Operating and Storage Junction Temperature Range Ratings 60 ±20 50 35.

Published: Aug 29, 2025 |