PH009T2G
Description
：
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
：
1) VDS=100V,ID=80A,RDS(ON)<9mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation.
Package Marking and Ordering Information：
Part NO. PH009T2G
Marking H009T2
Package TO- 220
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol VDS VGS
IDM PD EAS TJ, TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren Continuous Drain Current-TC=100℃ Pulsed Drain Current2 Power Dissipation Single pulse avalanche energy 3 Operating and Storage Junction Temperature Range
Ratings 100 ±20 80 50 290 120 100
-55-+150
Thermal Characteristics：
Symbol
Parameter
Max
RƟJC
Thermal Resistance,Junction to Case
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