PH009T2G - N-Channel MOSFET

Description

This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features

1) VDS=100V,ID=80A,RDS(ON).

DOINGTER

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Datasheet Details

Part number	PH009T2G
Manufacturer	DOINGTER
File Size	3.56 MB
Description	N-Channel MOSFET
Datasheet	PH009T2G Datasheet
Additional preview pages of the PH009T2G datasheet.

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PH009T2G Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=80A,RDS(ON)<9mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. GDS Package Marking and Ordering Information： Part NO.

Published: Aug 29, 2025 |