182T2C Datasheet PDF

Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty 200.0 V 140.0 V 10.0 V 6.0 A 3.0 A 87.5 W 2.0 °C/W 200.0 °C empty empty NO. TYPE empty empty CASE empty empty 182T2C NPN empty empty TO-3 empty empty PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. BVCEO IC = 50.0 mA (1) 140.0 - V 2. BVCBO IE = 3.0 mA (1) 200.0 - V 3. ICEO VCE = 140.0 V - 1.0 mA 4. ICES VCE = 180.0 V - 1.0 mA 5. IEBO VEB = 10.0 V - 1.0 mA 6. hFE IC = 2.0 A, VCE = 4.0 V (1) 75.0 180.0 - 7. VCE(SAT) IC = 2.0 A, IB = 250.0 mA (1) - 0.6 V 8. VBE(SAT) IC = 2.0 A, IB = 250.0 mA (1) - 1.2 V 9. fT VCE = 15.0 V, IC = 0.5 A, f = 10.0 MHz 10.0 - MHz 10. t(ON) IC = 5.0 A, IB = 1.0 A - 1.0 µs 11. tOFF IC = 5.0 A, IB = 1.0 A - 6.0 µs 12.