1N23E
1N23E is DIODE manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
3.0 V
4.0 V empty
0.03 A empty
A empty
A empty
W empty
°C/W
90.0 °C
NO. TYPE empty empty CASE empty empty
1N23E MICROWAVE X-BAND empty DO-23 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. NF f = 9.375 GHz
- 7.5 dB
2. ZIF f = 9.375 GHz
Ω
3. VSWR f = 9.375 GHz, Pin = 1.0 mW
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