1N2810B-M
1N2810B-M is DIODE manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VZ) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = Max. Power Dissipation (PT) at TC = 75 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ)
12.0 V empty
V empty
A empty
3.6 A empty
50.0 W
2.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
1N2810B-M 50W-ZENER empty empty TO-3 ANODE TO CASE MIL-S-19500+BI
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VF
IF = 10.0 A
(1)
- 1.5 V
2. VZ
IZ = 1.0 A, tp = 100.0 µs, dc = 0.1%
11.4...
