1N3016B-M
1N3016B-M is manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VZ) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
6.8 V empty
V empty
A empty
0.14 A empty
1.0 W
150.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
1N3016B-M 1W-ZENER empty empty DO-13 MIL-S-19500 BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VZ
IZ = 37.0 mA, tp = 100.0 µs, dc = 0.1 %
6.64 7.14
2. RZ
IZ = 37.0 mA, ∆IZ =...
