1N3317B
1N3317B is DIODE manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VZ) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IZM) Current Surge Peak (IZM) Current, Surge (IFM) at tp = Max. Power Dissipation (PT) at TC = 75 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ)
18.0 V empty
V empty
A empty
2.3 A empty
50.0 W
2.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
1N3317B 50W-ZENER empty empty DO-5_UNF ANODE TO CASE empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VF
IF = 10.0 A
(1)
- 1.5 V
2. VZ
IZ = 700.0 m A
17.1 18.9
3. IR
VR = 13.7 V
- 5.0 µA
4. RZ
IZ = 700.0 m A
- 2.0...
