1N3673A-M
1N3673A-M is DIODE manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ)
1000.0 V
1000.0 V empty
12.0 A empty
240.0 A empty
2.0 °C/W
150.0 °C
NO. TYPE empty empty CASE empty empty
1N3673A-M SILICON empty empty DO-4_UNF MIL-S-19500 BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. IR
VR = 1000.0 V
- 50.0 µA
2. IR
VR = 1000.0 V, TJ = 125.0° C
- 1.0 mA
3....
