1N5550
1N5550 is DIODE manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
200.0 V
200.0 V empty
3.0 A empty
100.0 A empty
70.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
1N5550 SILICON RECTIFIER empty SOD-64_1.3MM empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VF
IF = 3.0 A
(1)
- 1.0 V
2. IR
VR = 200.0 V
- 1.0 µA
3. IR
VR = 200.0 V, TA = 100.0° C
- 75.0 µA
4. trr
IF = 0.5 A, IR = 1.0 A, ir = 0.25 A
- 2.0 µs
5....
