1N5650A-M
1N5650A-M is DIODE manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VBR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current, Surge Peak (IPM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TA = 75 °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
51.0 V
70.1 V empty
A empty
21.4 A
200.0 A
1.0 W
100.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
1N5650A-M SUPPRESSOR empty empty DO-13 MIL-S-19500 BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. IR
VR = 43.6 V
- 5.0 µA
2. VBR
IR = 1.0 mA
48.5 53.6
3. VF
IF = 1.0...
