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Technical Data TRANSISTOR
maximum ratings
VDS VDG VGS ID IDM IG Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ)
40.0 V
40.0 V
40.0 V
0.1 A
empty
A
0.05 A
1.8 W
100.0 °C/W
200.0 °C
NO. TYPE empty empty CASE empty empty
2N4392-M N-FET empty empty TO-18 MIL-S-19500 BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVGSS
IG = 1.0 µA
40.0 -
V
2. BVDGO
ID = 1.0 µA
40.0 -
V
3. IGSS
VGS = 20.0 V
- 0.1 nA
4. VGS(OFF) VDS = 20.0 V, ID = 1.0 nA
2.0 5.0
V
5. ID(OFF)
VDS = 20.0 V, VSG = 5.0 V
- 0.2 nA
6. IDSS
VDS = 20.0 V
25.0 75.0
mA
7. VDS(ON)
ID =6.0 mA
- 0.4 V
8. RDS(ON)
ID = 1.0 mA
- 60.0 Ω
9. Ciss
VDS = 20.0 V
- 14.