2N6901-M Datasheet PDF

Technical Data TRANSISTOR maximum ratings VDS VDG VGS ID IDM IG Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) 100.0 V 100.0 V ± 10.0 V 1.69 A 5.0 A empty A 8.33 W 15.0 °C/W 150.0 °C NO. TYPE empty empty CASE empty empty 2N6901-M V-MOS LOGIC LEVEL N-CHANNEL TO-39 MIL-S-19500 BURN-IN 48h/125°C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. BVDSS ID = 1 mA 100.0 - V 2. VGS(TH) ID = 1 mA 1.0 2.0 V 3. IDSS VDS = 80 V - 1.0 µA 4. IDSS VDS = 80 V , TC = 125 °C - 50.0 µA 5. IGSS VGS = 10 V - 100.0 nA 6. VDS(ON) ID = 1.07 A , VGS = 5 V (1) - 1.5 V 7. VDS(ON) ID = 1.69 A , VGS = 5 V (1) - 2.4 V 8. RDS(ON) ID = 1.07 A , VGS = 5 V (1) - 1.4 Ω 9. RDS(ON) ID = 1.07 A , VGS = 5 V , TC = 125 °C (1) - 2.6 Ω 10. Ciss VDS = 25 V , VGS = 0 V - 200.0 pF 11. Coss VDS = 25 V , VGS = 0 V - 80.0 pF 12. Crss VDS = 25 V , VGS = 0 V - 20.0 pF 13. td(ON) ID = 1.07 A , VDD = 50 V - 25.0 ns 14. tr ID = 1.07 A , VDD = 50 V - 45.0 ns 15. td(OFF) ID = 1.07 A , VDD = 50 V - 45.0 ns 16. tf ID = 1.07 A , VDD = 50 V - 80.0 ns 17.