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Technical Data TRANSISTOR
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Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 75 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
600.0 V 400.0 V
10.0 V 120.0 A
20.0 A 400.0 W
0.25 °C/W 175.0 °C empty empty
NO. TYPE empty empty CASE empty empty
ESM3004 NPN HI-POWER empty TO-83_M-12 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCEO
IC = 0.5 A
(1) 400.0
-
V
2. BVEBO
IE = 0.2 A
(1) 10.0
-
V
3. ICEV
VCE = 600.0 V, VEB = 1.5 V, TJ = 125.0° C
- 5.0 mA
4. ICER
VCE = 600.0 V, RBE = 10.0 Ω, TJ = 125.0° C
- 10.0 mA
5. IEBO
VEB = 5.
ESM3004 Datasheet
