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2SB1198K - PNP Transistor

Key Features

  • — Low VCE(sat): VCE(sat)=-0.2V(Typ. )(IC=-0.5A,IB=-50mA) — High breakdown voltage BVCEO=-80V — Complements the 2SD1782K.

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Datasheet Details

Part number 2SB1198K
Manufacturer DXC
File Size 318.49 KB
Description PNP Transistor
Datasheet download datasheet 2SB1198K Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1198K SOT-23-3L Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) — High breakdown voltage BVCEO=-80V — Complements the 2SD1782K MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -500 200 150 -55-150 Units V V V mA mW ℃ ℃ SOT-23-3L 2.92 0.35 1.17 2.80 1.60 0.15 1.