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2SB1198K - PNP Transistor

Datasheet Summary

Features

  • — Low VCE(sat): VCE(sat)=-0.2V(Typ. )(IC=-0.5A,IB=-50mA) — High breakdown voltage BVCEO=-80V — Complements the 2SD1782K.

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Datasheet Details

Part number 2SB1198K
Manufacturer DXC
File Size 318.49 KB
Description PNP Transistor
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2SB1198K SOT-23-3L Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) — High breakdown voltage BVCEO=-80V — Complements the 2SD1782K MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -500 200 150 -55-150 Units V V V mA mW ℃ ℃ SOT-23-3L 2.92 0.35 1.17 2.80 1.60 0.15 1.
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