DXC 2SB1198K
PNP Transistor
| Part No. | 2SB1198K |
|---|---|
| Datasheet | 2SB1198K Download |
| Manufacturer | DXC |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782KMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -500 200 150 -55-150 Units V V V mA mW ℃ ℃ SOT-23-3L 2.92 0.35 1.17 2.80 1.60 0.15 1.90 Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -80 Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -80 Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 Collector cut-off current ICBO VCB=-50V, IE=0 Emitter cut-off current IE