DIM1200DDM17-PT500 - Dual Switch IGBT

DYNEX

Key Features

1.
8 ±T0r. e2nch Gate IGBT.
10µs4S4h±o0rt.2Circuit Withstand.
High The5rm7a±l 0C. y2cling Capability.
Soft Punch Through Silicon.
Isolated AlSiC Base with AlN Substrates.
55Le.2ad±F0r. e3e construction 1.
1.8L5ow±0V. C2E(sat) Device.
High Current Density KEY.

DIM1200DDM17-PT500 dual switch igbt by DYNEX - Datasheet Preview

Datasheet Details

Part number	DIM1200DDM17-PT500
Manufacturer	DYNEX
File Size	343.67 KB
Description	Dual Switch IGBT
Datasheet	DIM1200DDM17-PT500 Datasheet

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Full PDF Text Transcription (Reference)

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11.5 ±0.2 14 ±0.2 Replaces DS6282-4 TRENCH Gen5 TMOS Preliminary Information DIM1200DDM17-PT500 Dual Switch IGBT Module DS6282-5 May 2021 (LN40943) 6 ±0.2 FEATURES 1•8 ±T0r.e2nch Gate IGBT • 10µs4S4h±o0rt.2Circuit Withstand • High The5rm7a±l 0C.y2cling Capability • Soft Punch Through Silicon • Isolated AlSiC Base with AlN Substrates • 55Le.2ad±F0r.e3e construction 1•1.8L5ow±0V.C2E(sat) Device • High Current Density KEY PARAMETERS 6 x O7 VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 28 ±0.5 1700V 1s.