DIM125PHM33-TL000 - Half-Bridge IGBT

Features

Low VCE(sat) Device.
10µs Short Circuit Withstand.
High Thermal Cycling Capability.
High Current Density Enhanced DMOS SPT.
Isolated AlSiC Base with AlN Substrates.
Lead Free Construction.

DYNEX

Datasheet Details

Part number	DIM125PHM33-TL000
Manufacturer	DYNEX
File Size	310.85 KB
Description	Half-Bridge IGBT
Datasheet	DIM125PHM33-TL000 Datasheet
Additional preview pages of the DIM125PHM33-TL000 datasheet.

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Full PDF Text Transcription

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Replaces DS6306-2 DIM125PHM33-TL000 Half Bridge IGBT Module DS6306-3 February 2023 (LN42405) FEATURES • Low VCE(sat) Device • 10µs Short Circuit Withstand • High Thermal Cycling Capability • High Current Density Enhanced DMOS SPT • Isolated AlSiC Base with AlN Substrates • Lead Free Construction APPLICATIONS • High Reliability Inverters • Motor Controllers • Traction Auxiliaries • Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM125PHM33-TL000 is a Low VCE(sat) half bridge 3300V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module.

Published: Aug 27, 2023 |