DIM1800ESS12-A000
FEATURES
- 10µs Short Circuit Withstand
- Non Punch Through Silicon
- Isolated Cu Base with Al2O3 Substrates
- Lead Free construction
KEY PARAMETERS
VCES
VCE(sat)
- (typ)
(max)
IC(PK) (max)
1200V 2.2V 1800A 3600A
- Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
- Motor Controllers
- Traction Drives
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM1800ESS12-A000 is a single switch 1200V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit...
