DIM1800ESS12-A000 - Single Switch IGBT Module

Features

10µs Short Circuit Withstand.
Non Punch Through Silicon.
Isolated Cu Base with Al2O3 Substrates.
Lead Free construction KEY.

DYNEX

Datasheet Details

Part number	DIM1800ESS12-A000
Manufacturer	DYNEX
File Size	401.26 KB
Description	Single Switch IGBT Module
Datasheet	DIM1800ESS12-A000 Datasheet
Additional preview pages of the DIM1800ESS12-A000 datasheet.

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Full PDF Text Transcription

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Replaces DS5857-2 DIM1800ESS12-A000 Single Switch IGBT Module DS5857-3 August 2014 (LN31868) FEATURES  10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates  Lead Free construction KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 1200V 2.2V 1800A 3600A * Measured at the power busbars, not the auxiliary terminals APPLICATIONS  Motor Controllers  Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM1800ESS12-A000 is a single switch 1200V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module.

Published: Aug 3, 2024 |