DIM1800H1HS17-PH500 - Half Bridge IGBT Module

Features

Ultra-fine Trench Gate IGBT.
Cu Base with Enhanced Al2O3 Substrates.
High Thermal Cycling capacity.
Low VCE(sat) Device.
Low Switching Losses.

DYNEX

Datasheet Details

Part number	DIM1800H1HS17-PH500
Manufacturer	DYNEX
File Size	562.55 KB
Description	Half Bridge IGBT Module
Datasheet	DIM1800H1HS17-PH500 Datasheet
Additional preview pages of the DIM1800H1HS17-PH500 datasheet.

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Full PDF Text Transcription

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TRENCH Gen7 STMOS Preliminary Information DIM1800H1HS17-PH500 Half Bridge IGBT Module DS6405-1 October 2022 (LN42123) FEATURES • Ultra-fine Trench Gate IGBT • Cu Base with Enhanced Al2O3 Substrates • High Thermal Cycling capacity • Low VCE(sat) Device • Low Switching Losses APPLICATIONS • Motor Drives • High Power Converters • Wind Turbines • High Reliability Inverters The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM1800H1HS17-PH500 is a Half Bridge 1700V, trench gate, insulated gate bipolar transistor (IGBT) module with enhanced field stop and implantation technology.

Published: Aug 3, 2024 |