DIM450M1HS12-PB500
Key Features
- Trench Gate IGBT
- Cu Base with Enhanced Al2O3 Substrates
- 10µs Short Circuit Withstand
- pact Module KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 1200V 1.65V 450A 900A * Measured at the auxiliary terminals
