DIM600WHS12-PC500 - Half Bridge IGBT Module

DYNEX

Key Features

Cu Base with Al2O3 Substrates.
High Thermal Cycling Capability.
High Power Density.

DIM600WHS12-PC500 half bridge igbt module by DYNEX - Datasheet Preview

Datasheet Details

Part number	DIM600WHS12-PC500
Manufacturer	DYNEX
File Size	461.00 KB
Description	Half Bridge IGBT Module
Datasheet	DIM600WHS12-PC500 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
DIM600BSS12-A000	Single Switch IGBT Module	Dynex Semiconductor
DIM600BSS12-E000	Single Switch IGBT Module	Dynex Semiconductor
DIM600DCM17-A000	Igbt Chopper Module	Dynex Semiconductor
DIM600DDM17-A000	Dual Switch IGBT Module	Dynex Semiconductor
DIM600NSM45-F0000	Single Switch IGBT Module	Dynex Semiconductor

Other Datasheets by DYNEX

Part Number	Description
DIM600DCM17-A000	IGBT Chopper Module
DIM600M1HS17-PA500	Half Bridge IGBT
DIM600NCM17-A000	IGBT
DIM650H2HS17-PA500	Half Bridge IGBT
DIM1000NSM33-PS500	Single Switch IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TRENCH Gen5 TMOS DIM600WHS12-PC500 Half Bridge IGBT Module DS6407-1 October 2022 (LN42136) FEATURES • Cu Base with Al2O3 Substrates • High Thermal Cycling Capability • High Power Density APPLICATIONS • Motor Drives • High Power Converters • Wind Turbines • UPS Systems The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM600WHS12-PC500 is a half bridge 1200V, trench gate, insulated gate bipolar transistor (IGBT) module with enhanced field stop and implantation technology. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.