DIM800DCS12-A000
FEATURES
16 ±0.2
- 10µs Short Circuit Withstand
- Non Punch Through Silicon
- Isolated Cu Base With Al2O3 Substrates
- Lead Free Construction
KEY PARAMETERS
6 x O7
VCES
VCE(sat)
- (typ)
(max)
IC(PK) (max)
28 ±0.5
1200V
2.2s Vcrewing depth 810600m0AAax 8
- Measured at the power busbars, not the auxiliary terminals
APP5L5I.C2A±T0I.O3 NS
- 11.H8i5gh±R0e.2liability Inverters
- Motor Controllers
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM800DCS12-A000 is a dual switch 1200V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for...
