• Part: DS1258AB
  • Manufacturer: Dallas Semiconducotr
  • Size: 366.12 KB
Download DS1258AB Datasheet PDF
DS1258AB page 2
Page 2
DS1258AB page 3
Page 3

DS1258AB Key Features

  • 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Sepa
  • Address Inputs
  • Data In/Data Out
  • Chip Enable Upper Byte
  • Chip Enable Lower Byte
  • Write Enable
  • Output Enable
  • Power (+5V)
  • Ground

DS1258AB Description

Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV 128k x 16 memory by utilizing a variety...