DS1258AB Overview
Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV 128k x 16 memory by utilizing a variety...
DS1258AB Key Features
- 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Sepa
- Address Inputs
- Data In/Data Out
- Chip Enable Upper Byte
- Chip Enable Lower Byte
- Write Enable
- Output Enable
- Power (+5V)
- Ground