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DS1265W Datasheet 3.3v 8mb Nonvolatile Sram

Manufacturer: Dallas Semiconducotr

Overview: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com.

Datasheet Details

Part number DS1265W
Manufacturer Dallas Semiconducotr
File Size 155.91 KB
Description 3.3V 8Mb Nonvolatile SRAM
Datasheet DS1265W_DallasSemiconducotr.pdf

General Description

A0–A19 DQ0–DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect DESCRIPTION The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8 bits.

Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition.

When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

Key Features

  • 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 100ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Optional industrial (IND) temperature range of -40°C to +85°C PIN.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Maxim Integrated Products Logo DS1265AB 8M Nonvolatile SRAM Maxim Integrated Products
Maxim Integrated Products Logo DS1265Y 8M Nonvolatile SRAM Maxim Integrated Products

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