DS1330AB Datasheet (ds1330y / Ds1330ab) 256k Nonvolatile Sram

Manufacturer: Dallas Semiconducotr

Overview: DS1330Y/AB 256k Nonvolatile SRAM with Battery Monitor www.maxim-ic.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	DS1330AB
Manufacturer	Dallas Semiconducotr
File Size	191.49 KB
Description	(DS1330Y / DS1330AB) 256k Nonvolatile SRAM
Datasheet	DS1330AB DS1330xx Datasheet (PDF)

General Description

A0 – A14 DQ0 – DQ7 CE WE OE RST BW VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Reset Output - Battery Warning - Power (+5V) - Ground - No Connect DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits.

Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.

When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

Key Features

10 years minimum data retention in the absence of external power Data is automatically protected during power loss Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp-up Battery monitor checks remaining capacity daily Read and write access times as fast as 70ns Unlimited write cycle endurance Typical standby current 50mA Upgrade for 32k x 8 SRAM, EEPROM or Flash Lithi.

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