Datasheet Details
| Part number | DS2016 |
|---|---|
| Manufacturer | Dallas Semiconducotr |
| File Size | 162.69 KB |
| Description | 2k x 8 3V/5V Operation Static RAM |
| Datasheet |
 DS2016 Datasheet
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General Description
A0 to A10 - Address Inputs
DQ0 to DQ7 - Data Input/Output
CE
- Chip Enable Input
WE
- Write Enable Input
OE
- Output Enable Input
VCC GND
- Power Supply Input 2.7V - 5.5V - Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random acce
Key Features
- Low-power CMOS design.
- Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V.
- Full operation for VCC = 5.5V to 2.7V.
- Data retention voltage = 5.5V to 2.0V.
- Fast 5V access time - DS2016-100 100ns.
- Reduced-speed 3V access time - DS2016-100 250ns.
- Operating temperature range of -40°C to +85°C.
- Full static operation.
- TTL compatible inputs and outputs over voltage range of 5.5V to 2.7V.