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DS2229 - Word-Wide 8 Meg SRAM Stik

General Description

The DS2229 is an 8,388,608-bit low-power fully static Random Access Memory organized as a 524,888 word by 16 bits using CMOS technology.

The device employs the popular JEDEC standard 80-pin SIMM connection scheme with no additional circuitry required.

Key Features

  • Organized as a high density 512k x 16 bit StikTM Fast access time of 85 ns Unlimited write cycles Employs popular JEDEC standard 80-position SIMM connector Full ±10% operating range Read cycle time equals write cycle time Ultra-low standby current < 10 µA Suitable for battery-backed.

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Datasheet Details

Part number DS2229
Manufacturer Dallas Semiconducotr
File Size 374.85 KB
Description Word-Wide 8 Meg SRAM Stik
Datasheet download datasheet DS2229 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DS2229 Word-Wide 8 Meg SRAM Stik www.dalsemi.com FEATURES Organized as a high density 512k x 16 bit StikTM Fast access time of 85 ns Unlimited write cycles Employs popular JEDEC standard 80-position SIMM connector Full ±10% operating range Read cycle time equals write cycle time Ultra-low standby current < 10 µA Suitable for battery-backed applications PIN ASSIGNMENT 1 1M SRAM 1M SRAM 1M SRAM 1M SRAM 80-PIN SIP STIK 80 DESCRIPTION The DS2229 is an 8,388,608-bit low-power fully static Random Access Memory organized as a 524,888 word by 16 bits using CMOS technology. The device employs the popular JEDEC standard 80-pin SIMM connection scheme with no additional circuitry required. The device operates from a single power supply with a voltage input of 4.5 to 5.5 volts.