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DS9502 - ESD Protection Diode

General Description

This DS9502 was designed as an additional ESD protection for SRAM based battery

buffered portable memory modules.

protection structure on their I/O line.

Key Features

  • Zener characteristic with voltage snap.
  • back to protect against ESD hits.
  • High avalanche voltage, low leakage and low capacitance avoid signal attenuation SYMBOL AND.

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Datasheet Details

Part number DS9502
Manufacturer Dallas Semiconducotr
File Size 67.06 KB
Description ESD Protection Diode
Datasheet download datasheet DS9502 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DS9502 ESD Protection Diode www.dalsemi.com SPECIAL FEATURES § Zener characteristic with voltage snap–back to protect against ESD hits § High avalanche voltage, low leakage and low capacitance avoid signal attenuation SYMBOL AND CONVENTIONS C IC VCA A § Compatible to all 5V logic families § Space saving, low inductance TSOC surface mount package § Symmetric dual–port bondout to maximize energy dissipation in protection device § Industrial temperature range 3 4 TOP VIEW 3.7 X 4.0 X 1.5 mm See Mech. Drawings Section PACKAGE OUTLINE TSOC SURFACE MOUNT PACKAGE 1 2 6 5 SIDE VIEW ORDERING INFORMATION DS9502P 6-lead TSOC package DESCRIPTION This DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable memory modules.