DS1230AB Description
DS1230Y/AB 256k Nonvolatile SRAM.
DS1230AB Key Features
- 10 years minimum data retention in the
- Data is automatically protected during power
- Replaces 32k x 8 volatile static RAM
- Unlimited write cycles
- Low-power CMOS
- Read and write access times of 70 ns
- Lithium energy source is electrically
- Full ±10% VCC operating range (DS1230Y)
- Optional ±5% VCC operating range
- 40°C to +85°C, designated IND