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DS1230AB - 256k Nonvolatile SRAM

Key Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory.
  • Unlimited write cycles.
  • Low-power CMOS.
  • Read and write access times of 70 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Full ±10% VCC operating range (DS1230Y).
  • Optional ±5% VCC operating range (DS1230AB.

📥 Download Datasheet

Datasheet Details

Part number DS1230AB
Manufacturer Dallas
File Size 195.78 KB
Description 256k Nonvolatile SRAM
Datasheet download datasheet DS1230AB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
19-5635; Rev 11/10 www.maxim-ic.