DXG60N65HSEU
DXG60N65HSEU is IGBT manufactured by Daxin.
Features
- 650V 60A,VCE(sat)(typ.) = 2.3 V@60A
- Field Stop IGBT Technology.
- 10μs Short Circuit Capability.
- Square RBSOA.
- Positive VCE (on) Temperature Coefficient.
Benefits
- High Efficiency for Welding, Inductive heating, UPS and other high frequency application
- Rugged Performance
- Excellent Current Sharing in Parallel Operation
Absolute Maxinmun Ratings
Symbol
VCES VGES
ICM IF IFM tsc Isc PD PD TJ TSTG
Parameter
Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current ( TC=25 ℃) Continuous Collector Current ( TC=100℃) Pulsed Collector Current (Note 1) Diode Continuous Forward Current ( TC=100 ℃) Diode Maximum Forward Current (Note 1) Short Circuit Withstand Time Short Circuit Current Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range
Value
650 ±30 120 60 240 60 240 10 270 416 166 -55 to +150 -55 to +150
Units
V V A A A A A us A W W ℃ ℃
Thermal Characteristics
Symbol
Rth j-c Rth j-c Rth j-a
Parameter
Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction to Ambient
Max.
0.30 0.65 80
Units
℃/ W ℃/ W ℃/ W
-1Total 8 Pages
Rev1. 2021
Electrical Characteristics (TC=25℃ unless otherwise noted )
Symbol
BVCES ICES
IGES
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Gate Leakage Current, Forward Gate Leakage Current, Reverse
VGE(th) VCE(sat) Qg Qge Qgc
Gate Threshold Voltage Collector-Emitter Saturation Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge t...
