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2SA673 - PNP EPITAXIAL PLANAR TRANSISTOR

General Description

Designed for low frequency amplifier applications Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature S

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Datasheet Details

Part number 2SA673
Manufacturer Dc Components
File Size 212.74 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet 2SA673 Datasheet

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Full PDF Text Transcription (Reference)

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA673 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -35 -35 -5 -500 400 +150 -55 to +150 Unit V V V mA mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ .050 (1.27)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp. 5oTyp. (1.