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DC COMPONENTS CO., LTD.
R
2SB1426
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for DC-to-DC converter applications.
TO-92
Pinning
1 = Emitter 2 = Collector 3 = Base
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -20 -20 -6 -3 750 +150 -55 to +150 Unit V V V A mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
3 2 1
.050 o o 5 Typ. 5 Typ. (1.